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IS41LV8200A - 2M x 8 (16-MBIT) DYNAMIC RAM

General Description

The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval: -- 2,048 cycles/32 ms.
  • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Single power supply: 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Lead-free available ISSI APRIL 2005 ® www. DataSheet4U. com.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205A 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Lead-free available ISSI APRIL 2005 ® www.DataSheet4U.com DESCRIPTION The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.