IS41LV8200 Datasheet | ISSI

IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .. Features ISSI DESCRIPTION ® JUNE 2001 - Extended Data-Out (EDO) Page Mode access cycle - TTL patible inputs and outputs - Refresh Interval: -- 2,048 cycles/32 ms - Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden - Single power supply: 5V±10% or 3.3V ± 10% - Byte Write and Byte Read operation via two CAS - Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row...