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IS41LV8200 - 2M x 8 (16-MBIT) DYNAMIC RAM

Download the IS41LV8200 datasheet PDF. This datasheet also covers the IS41C8200 variant, as both devices belong to the same 2m x 8 (16-mbit) dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

® JUNE 2001 Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 5V±10% or 3.3V ± 10% Byte

Key Features

  • ISSI.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41C8200_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS41LV8512 512K x 8 (4-MBIT) DYNAMIC RAM Integrated Circuit Solution
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM ISSI
IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
IS41LV1665 64K x16 bit Dynamic RAM ICSI
IS41LV32256 EDO DYNAMIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205A 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM
IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com FEATURES ISSI DESCRIPTION ® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.