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IS41LV85120 - 512K x 8 (4-MBIT) DYNAMIC RAM

Download the IS41LV85120 datasheet PDF. This datasheet also covers the IS41C85120 variant, as both devices belong to the same 512k x 8 (4-mbit) dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

® PRELIMINARY INFORMATION SEPTEMBER 2001

Key Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 1024 cycles/16 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120).
  • Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page M.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41C85120_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS41LV8512 512K x 8 (4-MBIT) DYNAMIC RAM Integrated Circuit Solution
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM ISSI
IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
IS41LV1665 64K x16 bit Dynamic RAM ICSI
IS41LV32256 EDO DYNAMIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM
IS41LV85125 512K x 8 (4-MBIT) DYNAMIC RAM
IS41LV85125A 512K x 8 (4-MBIT) DYNAMIC RAM
IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com ISSI DESCRIPTION ® PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120) • Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word.