IS41LV85120 - 512K x 8 (4-MBIT) DYNAMIC RAM

Product Overview

Integrated Silicon Solution

Part number	IS41LV85120
Manufacturer	Integrated Silicon Solution
File Size	190.69 KB
Description	512K x 8 (4-MBIT) DYNAMIC RAM
Datasheet	IS41LV85120 Datasheet
Note	This datasheet PDF includes multiple part numbers: IS41LV85120, IS41C85120. Please refer to the document for exact specifications by model.
Additional preview pages of the IS41LV85120 datasheet.

® PRELIMINARY INFORMATION SEPTEMBER 2001

TTL compatible inputs and outputs.
Refresh Interval: 1024 cycles/16 ms.
Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
JEDEC standard pinout.
Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120).
Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page M.

📁 Similar Datasheet

IS41LV8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)
IS41LV16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)
IS41LV16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)
IS41LV1665 - 64K x16 bit Dynamic RAM (ICSI)
IS41LV32256 - EDO DYNAMIC RAM (ISSI)
IS41LV44052B - 4M x 4 (16-MBIT) DYNAMIC RAM (ISSI)
IS41C16128 - 128K x 16 (2-MBIT) DYNAMIC RAM (ISSI)
IS41C16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

Other Datasheets by Integrated Silicon Solution

Published: Apr 24, 2009 |