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IS41LV85125 - 512K x 8 (4-MBIT) DYNAMIC RAM

Download the IS41LV85125 datasheet PDF. This datasheet also covers the IS41C85125 variant, as both devices belong to the same 512k x 8 (4-mbit) dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

® PRELIMINARY INFORMATION AUGUST 2001

Key Features

  • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply: -- 5V ± 10% (IS41C85125) -- 3.3V ± 10% (IS41LV85125).
  • Industrial temperature available The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random ac.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41C85125_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41C85125 IS41LV85125 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE www.datasheet4u.com ISSI DESCRIPTION ® PRELIMINARY INFORMATION AUGUST 2001 FEATURES • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: -- 5V ± 10% (IS41C85125) -- 3.3V ± 10% (IS41LV85125) • Industrial temperature available The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-bit word.