• Part: IS41LV8200A
  • Manufacturer: ISSI
  • Size: 159.05 KB
Download IS41LV8200A Datasheet PDF
IS41LV8200A datasheet preview
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IS41LV8200A Key Features

  • Extended Data-Out (EDO) Page Mode access cycle
  • TTL patible inputs and outputs
  • Refresh Interval: -- 2,048 cycles/32 ms
  • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
  • Single power supply: 3.3V ± 10%
  • Byte Write and Byte Read operation via two CAS
  • Lead-free available

Related ISSI Datasheets

Part Number Description
IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV8205A 2M x 8 (16-MBIT) DYNAMIC RAM
IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM
IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM

IS41LV8200A Description

The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.