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IS61SF12836 - (IS61SF12832 / IS61SF12836) 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

Download the IS61SF12836 datasheet PDF. This datasheet also includes the IS61SF12832 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS61SF12832_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61SF12832 and IS61SF12836 are high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications.

It is organized as 131,072 words by 32 bits or 36 bits, fabricated with ISSI's advanced CMOS technology.

The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit.

Overview

IS61SF12832 IS61SF12836 128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC.

Key Features

  • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 12 ns.
  • Internal self-timed write cycle.
  • Individual Byte Write Control and Global Write.
  • Clock controlled, registered address, data inputs and control signals.
  • Pentium™ or linear burst sequence control using MODE input.
  • Three chip enables for simple depth expansion and address pipelining.
  • Common data inputs and data outputs.
  • JEDEC 100-Pin TQFP and 119-pin PBGA package.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61SF12832 (IS61SF12832 / IS61SF12836) 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256AL 32K x 8 High Speed CMOS STATIC RAM
IS61C3216AL 32K x 16 HIGH-SPEED CMOS STATIC RAM