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JS29F04G08AANB1 - (JS29FxxG08xANB1) SD74 NAND Flash Memory

Download the JS29F04G08AANB1 datasheet PDF. This datasheet also covers the JS29F16G08FANB1 variant, as both devices belong to the same (js29fxxg08xanb1) sd74 nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter.

Key Features

  • Single-level cell (SLC) Technology Organization:.
  • Page size: x8: 2,112 bytes (2,048 + 64 bytes).
  • Block size: 64 pages (128K + 4K bytes).
  • Plane size: 2,048 blocks.
  • Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance:.
  • Random read: 25µs (MAX).
  • Sequential read: 25ns (MIN) Write performance:.
  • Page program: 220µs (TYP).
  • Block erase: 1.5ms (TYP) Data Retention:.
  • 10 years Endurance:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JS29F16G08FANB1_Intel.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JS29F04G08AANB1
Manufacturer Intel
File Size 2.30 MB
Description (JS29FxxG08xANB1) SD74 NAND Flash Memory
Datasheet download datasheet JS29F04G08AANB1 Datasheet

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Other Datasheets by Intel

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JS29F08G08CANB1 (JS29FxxG08xANB1) SD74 NAND Flash Memory
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JS29F16G08FANB1 (JS29FxxG08xANB1) SD74 NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
w w w . D a t a S h e e t 4 U . c o m Intel® SD74 NAND Flash Memory Product Features Single-level cell (SLC) Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks — Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance: — Random read: 25µs (MAX) — Sequential read: 25ns (MIN) Write performance: — Page program: 220µs (TYP) — Block erase: 1.5ms (TYP) Data Retention: — 10 years Endurance: — 100,000 PROGRAM/ERASE cycles First block (block address 00h): — Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles Vcc: — 2.7V – 3.