2N6453 Description
The -25V InterFET 2N6453 and 2N6454 are targeted for sensitive amplifier stages for mid-frequencies designs. Gate leakages are typically 750fA at room temperatures. The InterFET proprietary JFET materials and processes result in highest radiation tolerance and lowest leakage JFETs on the market.
2N6453 Key Features
- InterFET N0132L Geometry
- Low noise: 1.0 nV/√Hz typical
- High gain: 32mS typical
- Low gate leakage: 750fA typical @10V
- Typical IDSS: 25mA
- Typical BVGSS: -35V
- High radiation tolerance
- RoHS, REACH, CMR pliant
- Custom test and binning options available
- SMT, TH, and bare die package options