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2N6453 - N-Channel JFET

Description

The -25V InterFET 2N6453 and 2N6454 are targeted for sensitive amplifier stages for mid-frequencies designs.

Gate leakages are typically 750fA at room temperatures.

The InterFET proprietary JFET materials and processes result in highest radiation tolerance and lowest leakage JFETs on the market.

Features

  • InterFET N0132L Geometry.
  • Low noise: 1.0 nV/√Hz typical.
  • High gain: 32mS typical.
  • Low gate leakage: 750fA typical @10V.
  • Typical IDSS: 25mA.
  • Typical BVGSS: -35V.
  • High radiation tolerance.
  • RoHS, REACH, CMR compliant.
  • Custom test and binning options available.
  • SMT, TH, and bare die package options.
  • Edge case SPICE modeling: InterFET SPICE Industry Standard Crosses.
  • 2SK152, 2SK170, 2N3972, 2N.

📥 Download Datasheet

Datasheet Details

Part number 2N6453
Manufacturer InterFET
File Size 702.43 KB
Description N-Channel JFET
Datasheet download datasheet 2N6453 Datasheet

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now 2N6453-4 2N6453, 2N6454 N-Channel JFET Features • InterFET N0132L Geometry • Low noise: 1.
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