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AUIRF2805L Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE GRADE PD - 96383A AUIRF2805S AUIRF2805L.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

D2Pak AUIRF2805S TO-262 AUIRF2805L G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l l l HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 4.7mΩ 135A G S RDS(on) max. ID h.