AUIRF2903Z mosfet equivalent, power mosfet.
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V(BR)DSS RDS(on) typ.
30V 1.9mΩ 2.4mΩ 260Ak 160A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitiv.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
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