Datasheet Summary
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- 96321
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- D
V(BR)DSS RDS(on) typ.
75V 3.0mΩ 3.8mΩ 180A
G S max. ID (Silicon Limited) j
S (Pin 2, 3, 5, 6, 7) G (Pin 1)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching...