AUIRF2905Z mosfet equivalent, power mosfet.
l l l l l l l
D
55V 11.1mΩ 14.5mΩ
59A k 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Image gallery
Download