AUIRF7759L2TR1 mosfet equivalent, power mosfet.
of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust.
* Exceptionally Small Footprint and Low Profile
* High Power Density
* Low Parasitic Parameters
* Dual S.
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm prof.
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