Datasheet Details
| Part number | AUIRFIZ34N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 294.95 KB |
| Description | Power MOSFET |
| Datasheet |
 AUIRFIZ34N Datasheet
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General Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
- l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified.
- HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 40m 21A.