Datasheet4U Logo Datasheet4U.com

AUIRFIZ44N - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS… Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 24m 31A AUIRFIZ44N.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon
AUIRF1010EZS Power MOSFET Infineon
AUIRF1010Z Power MOSFET Infineon
AUIRF1010ZL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFIZ34N Power MOSFET
AUIRFI3205 Power MOSFET
AUIRFI4905 Power MOSFET
AUIRF1010EZ Power MOSFET
AUIRF1010EZL Power MOSFET

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE PD - 97767 Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS… Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 24m 31A AUIRFIZ44N Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Published: |