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AUIRFP4409 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G Gate Ordering Information Base part number Package Type Standard Pack Form Quantity AUIRFP4409 TO-247AC Tube 25 AUIRFP4409 HEXFET® Power MOSFET VDSS RDS(on) typ.

Overview

AUTOMOTIVE GRADE.

Key Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   G D S.