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AUIRL7766M2TR Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Overview

PD - 97648 AUTOMOTIVE GRADE AUIRL7766M2TR AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive DC-DC and other Heavy Load Applications • Logic Level Gate Drive • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  V(BR)DSS RDS(on) typ.

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ID (Silicon Limited) Qg 100V 8.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRL7766M2TR Power MOSFET Infineon

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