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G4PC30U - IRG4PC30U

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR
G4PC30KD IRG4PC30KD
G4PC30S IRG4PC30S
G4PC40FD IRG4PC40FD
G4PC40K IRG4PC40K

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.