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International Rectifier Electronic Components Datasheet

G4PC50K Datasheet

IRG4PC50K

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PD - 91583B
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
IRG4PC50K
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGPC50K and IRGPC50M
devices
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
52
30
104
104
10
±20
170
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000


International Rectifier Electronic Components Datasheet

G4PC50K Datasheet

IRG4PC50K

No Preview Available !

IRG4PC50K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
V(BR)CES/TJ TemperatureCoeff.ofBreakdownVoltage
VCE(ON)
Collector-to-EmitterSaturationVoltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ TemperatureCoeff.ofThresholdVoltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V VGE = 0V, IC = 250µA
18 — — V VGE = 0V, IC = 1.0A
0.47 V/°C VGE = 0V, IC = 1.0mA
1.84 2.2
IC = 30A
VGE = 15V
2.19 V IC = 52A
See Fig.2, 5
1.79
IC = 30A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
17 24 S VCE = 100 V, IC = 30A
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
200 300
IC = 30A
25 38 nC VCC = 400V
85 130
VGE = 15V
38
See Fig.8
34 ns TJ = 25°C
160 240
IC = 30A, VCC = 480V
79 120
VGE = 15V, RG = 5.0
0.49
Energy losses include "tail"
0.68 mJ See Fig. 9,10,14
1.12 1.4
10 — —
37
35
260
170
µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
IC = 30A, VCC = 480V
ns VGE = 15V, RG = 5.0
Energy losses include "tail"
2.34 mJ See Fig. 11,14
13 nH Measured 5mm from package
3200
370
95
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number G4PC50K
Description IRG4PC50K
Maker International Rectifier
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G4PC50K Datasheet PDF






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