GB15RF120K Overview
Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design VCES = 1200V IC = 15A, TC=80°C tsc > 10µs, TJ=150°C ECONO2 PIM VCE(on) typ. = 2.55V Benefits
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
