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International Rectifier Electronic Components Datasheet

GB15RF120K Datasheet

IGBT PIM MODULE

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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed 
ECONO2 PIM
PD - 94571
GB15RF120K
VCES = 1200V
IC = 15A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.55V
Absolute
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Maximum
Ratings
(TJ
=25°C,
unless
otherwise
indicated)
Parameter
Symbol
Test Conditions
Inverter Collector-to-Emitter Voltage
VCES
Gate-to-Emitter Voltage
Collector Current
VGES
IC
Continuous
25°C / 80°C
ICM 25°C
Diode Maximum Forward Current
IFM d
25°C
Power Dissipation
PD
1 device
25°C
Input Repetitive Peak Reverse Voltage
Rectifier Average Output Current
VRRM
IF(AV)
50/60Hz sine pulse
80°C
Surge Current (Non Repetitive)
I2t (Non Repetitive)
IFSM Rated VRRM applied,10ms,
I2t sine pulse
Brake
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
VCES
VGES
IC
Continuous
25°C / 80°C
ICM 25°C
Power Dissipation
PD
1 device
25°C
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
VRRM
TJ
Storage Temperature Range
TSTG
Isolation Voltage
VISOL
AC (1min.)
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
1
Symbol
RTHJC
Min
2.7
Typical
Ratings
1200
±20
25 / 15
50
50
125
1600
15
120
72
1200
±20
15 / 7.5
30
83
1200
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Maximum Units
1.0 °C/W
1.6
1.5
2.3
1.0
3.3 Nm
www.irf.com
10/18/02


International Rectifier Electronic Components Datasheet

GB15RF120K Datasheet

IGBT PIM MODULE

No Preview Available !

GB15RF120K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Inverter BVCES
Collector-to-Emitter Breakdown Voltage
1200 — —
V VGE = 0V, IC = 500µA
IGBT V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
VCE(on)
Collector-to-Emitter Voltage
— 2.55 2.80 V IC = 15A, VGE = 15V
— 3.15 3.50
IC = 25A, VGE = 15V
— 3.05 —
IC = 15A, VGE = 15V, TJ = 125°C
— 3.85 —
IC = 25A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
4.0 5.0 6.0
VCE = VGE, IC = 250µA
VGE(th)
Threshold Voltage temp. coefficient
— -11 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
ICES Zero Gate Voltage Collector Current
— 8 50 µA VGE = 0V, VCE = 1200V
— 370 —
VGE = 0V, VCE = 1200V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±200 nA VGE = ±20V
Qg Total Gate Charge (turn-on)
— 95 145
IC = 15A
Qge Gate-to-Emitter Charge (turn-on)
— 10 15 nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on)
— 45 70
VGE = 15V
Eon Turn-On Switching Loss
— 1300 2300
IC = 15A, VCC = 600V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 900 1550
— 2200 3850
µJ VGE = 15V, RG = 22, L = 400µH
eTJ = 25°C
Eon Turn-On Switching Loss
— 1700 2850
IC = 15A, VCC = 600V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 1250 1900
— 2950 4750
µJ VGE = 15V, RG = 22, L = 400µH
eTJ = 125°C
td(on)
Turn-On delay time
— 50 65
IC = 15A, VCC = 600V
tr Rise time
— 50 70
ns VGE = 15V, RG = 22, L = 400µH
td(off)
Turn-Off delay time
— 300 540
TJ = 125°C
tf Fall time
— 220 286
Cies Input Capacitance
— 1285 —
VGE = 0V
Coes Output Capacitance
— 280 —
pF VCC = 30V
Cres Reverse Transfer Capacitance
— 35 —
f = 1Mhz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 50A
RG = 22, VGE = +15V to 0V
TJ = 150°C
SCSOA Short Circuit Safe Operating Area
10 — —
µs VCC = 900V, VP = 1200V
RG = 22, VGE = +15V to 0V
Inverter
TJ = 125°C
FRED Irr
Diode Peak Reverse Recovery Current
— 22 —
A VCC = 600V, IF = 15A, L = 400µH
VGE = 15V, RG = 22
— 2.15 2.55 V IF = 15A
VFM Diode Forward Voltage Drop
— 2.60 3.05
IF = 25A
— 2.30 —
IF = 15A, TJ = 125°C
— 2.90 —
IF = 25A, TJ = 125°C
Ref. Fig
1,2
4,5
3,4,5
7
CT1
CT4
9,11
CT4
WF1,2
10,12
CT4
WF1
WF2
6
CT2
CT3
13,14,15
CT4
8
2 www.irf.com


Part Number GB15RF120K
Description IGBT PIM MODULE
Maker International Rectifier
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GB15RF120K Datasheet PDF






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