IR01D214 Key Features
- Output Power MOSFETs in half-bridge configuration
- 500V rated breakdown voltage
- High side gate drive designed for bootstrap
- operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge
- H214 1.1Ω
- H224 3.0Ω
- H420 2.0W 4.0W