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IRF3709ZCSPBF - HEXFET Power MOSFET

Download the IRF3709ZCSPBF datasheet PDF. This datasheet also covers the IRF3709ZCLPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • + (Qrr × Vin × f ) ⎠ ⎝ 2.
  • dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2 ⎛ ⎞ ⎛ Qgs 2 Qgd +⎜I× × Vin × f ⎟ + ⎜ I × × Vin × ig ig ⎝ ⎠ ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ f⎟ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3709ZCLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3709ZCS N-Channel MOSFET VBsemi
IRF3709ZCS N-Channel MOSFET INCHANGE
IRF3709Z N-Channel MOSFET INCHANGE
IRF3709ZS N-Channel MOSFET INCHANGE
IRF3709 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3709ZCS HEXFET Power MOSFET
IRF3709ZCL HEXFET Power MOSFET
IRF3709ZCLPBF HEXFET Power MOSFET
IRF3709Z HEXFET Power MOSFET
IRF3709ZL HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95529 IRF3709ZCSPbF IRF3709ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.3m: Qg 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak IRF3709ZCS TO-262 IRF3709ZCL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 87 62 Units V A c h h 350 79 40 0.53 -55 to + 175 300 (1.
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