*
*
*
*
* Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G .

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.

IRF540Z

IRF540ZL

IRF540ZLPBF

IRF540ZPBF

IRF540ZSPBF

IRF540

IRF540A

IRF540FI

IRF540N

IRF540NL

IRF540NLPbF

IRF540NPbF

IRF540NPBF