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IRF540ZS - AUTOMOTIVE MOSFET

Download the IRF540ZS datasheet PDF (IRF540Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for automotive mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF540Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 94758 AUTOMOTIVE MOSFET IRF540Z IRF540ZS IRF540ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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