IRF630NS datasheet, mosfet equivalent, International Rectifier

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IRF630NS Features and benefits

T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 6 IRF630N/S/L Peak Diode R.

IRF630NS Application

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

IRF630NS Description

l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined.

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