QG 50KΩ 12V .2µF .3µF 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge T.

The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to ap.

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design .

IRF634N

IRF634NLPbF

IRF634NPbF

IRF634NS

IRF634NSPbF

IRF634

IRF634A

IRF634B

IRF634FP

IRF634S

IRF630

IRF630A

IRF630B