IRF640NL Datasheet - International Rectifier

Power MOSFET

IRF640NL Features

* 1.22 (.048) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFE1T- GATE IGBTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (

IRF640NL General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides.

IRF640NL Datasheet (236.22 KB)

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Datasheet Details

Part number:

IRF640NL

Manufacturer:

International Rectifier

File Size:

236.22 KB

Description:

Power mosfet.
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

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IRF640NL Power MOSFET International Rectifier

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IRF640NL Features

IRF640NL General Description

Datasheet Details

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