12V .2µF .3µF + D.U.T. -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com 6 IRF640N/S/L D.U.T + ‚ -  RG Peak Diode Re.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to .

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that.

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