IRF6607 mosfet equivalent, power mosfet.
mperature
100
(Z thJA)
D = 0.50 10 0.20 0.10 0.05
Thermal Response
1
0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is.
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