IRF6608 mosfet equivalent, lhexfet power mosfet.
0
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature
100
Fig 10. Threshold Voltage vs. Temperature
D = 0.50
T.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 178.75KB)