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International Rectifier Electronic Components Datasheet

IRF6609TRPBF Datasheet

Power MOSFET

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PD - 97091A
IRF6609PbF
IRF6609TRPbF
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
DirectFET™ Power MOSFET ‚
VDSS
20V
RDS(on) max
2.0m@VGS = 10V
2.6m@VGS = 4.5V
Qg
46nC
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
DirectFET™ ISOMETRIC
SQ SX
Description
ST
MQ MX MT
The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
20
±20
150
31
25
250
89
1.8
2.8
0.022
-40 to + 150
V
A
W
W/°C
°C
Parameter
hlRθJA Junction-to-Ambient
ilRθJA Junction-to-Ambient
jlRθJA Junction-to-Ambient
klRθJC
Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Notes  through Š are on page 10
www.irf.com
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
1
7/3/06Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF6609TRPBF Datasheet

Power MOSFET

No Preview Available !

IRF6609PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C Reference to 25°C, ID = 1mA
gStatic Drain-to-Source On-Resistance ––– 1.6 2.0 mVGS = 10V, ID = 31A
––– 2.0 2.6
gVGS = 4.5V, ID = 25A
Gate Threshold Voltage
1.55 ––– 2.45 V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– -6.1 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance 91 ––– ––– S VDS = 10V, ID = 25A
Qg Total Gate Charge
––– 46 69
Qgs1
Pre-Vth Gate-to-Source Charge
––– 15 –––
VDS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
––– 4.7 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 15 –––
ID = 17A
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
––– 11 –––
––– 20 –––
See Fig. 16
Qoss
td(on)
tr
Output Charge
Turn-On Delay Time
Rise Time
––– 26 ––– nC VDS = 10V, VGS = 0V
––– 24 –––
ÃgVDD = 16V, VGS = 4.5V
––– 95 –––
ID = 25A
td(off)
Turn-Off Delay Time
––– 26 ––– ns Clamped Inductive Load
tf Fall Time
Ciss Input Capacitance
––– 9.8 –––
––– 6290 –––
VGS = 0V
Coss Output Capacitance
––– 1850 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 860 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
fEAS (Thermally limited) Single Pulse Avalanche Energy
ÃeIAR Avalanche Current
eEAR Repetitive Avalanche Energy
Diode Characteristics
Typ.
–––
–––
–––
Max.
240
See Fig. 12, 13, 18a,
18b,
Units
mJ
A
mJ
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 89
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ãe(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 250
––– 0.80 1.2
––– 32 48
––– 26 39
integral reverse
G
p-n junction diode.
S
gV TJ = 25°C, IS = 25A, VGS = 0V
ns TJ = 25°C, IF = 25A
gnC di/dt = 100A/µs
www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number IRF6609TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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