Datasheet4U Logo Datasheet4U.com

IRF6609PBF - Power MOSFET

Description

The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • ery part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 12, 13). tav = Average time in avalanche.

📥 Download Datasheet

Datasheet preview – IRF6609PBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses and Switching Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ IRF6609PbF IRF6609TRPbF Qg 46nC PD - 97091A VDSS 20V 2.0mΩ@VGS = 10V 2.6mΩ@VGS = 4.5V RDS(on) max Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT MT DirectFET™ ISOMETRIC Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
Published: |