IRF6609 Description
The IRF6609 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...
IRF6609 Key Features
- Low Switching Losses
- Ideal Synchronous Rectifier MOSFET
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- patible with existing Surface Mount Techniques