Datasheet Details
| Part number | IRF6609 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 230.63 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6609 Datasheet
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General Description
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Key Features
- ice Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
- VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D. U. T. Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform www. irf. com 7 IRF6609 DirectFET O.