Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- RF6612PbF
Current Regulator Same Type as D. U. T. 50KΩ
12V .2µF
.3µF
D. U. T. + -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Id Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 14b. Gate Charge Waveform
15V
VDS
L
VRGGS 20V
tp
D. U. T IAS
0.01Ω
DRIVER
+ -
VDD A
Fig 15a. Unclamped Inductive Test Circuit
LD VDS
+ VDD -
VGS
Pulse Width < 1µs Duty Factor < 0.1%
D. U. T
Fig 16a. Switching Time Test Circuit 6
V(BR)DSS tp
IAS
Fig 15b. Unclamped Inductive W.
IRF661TRPbF Datasheet
