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IRF6617PBF - Power MOSFET

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Description

The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile.

Features

  • ig 14b. Unclamped Inductive Waveforms + VDD D. U. T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 15a. Switching Time Test Circuit Current Regulator Same Type as D. U. T. Fig 15b. Switching Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRF661.

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PD -97082 IRF6617PbF IRF6617TRPbF l l l l l l l l l RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible ‰ Compatible with existing Surface Mount Techniques ‰ DirectFET™ Power MOSFET Š VDSS 30V RDS(on) max 8.1mΩ@VGS = 10V 10.3mΩ@VGS = 4.5V Qg(typ.) 11nC Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT ST DirectFET™ ISOMETRIC Description The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile.
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