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IRF6617TR1 - HEXFET Power MOSFET

General Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Key Features

  • river Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ -.
  • - +  RG.
  • di/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95847 IRF6617 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 30V RDS(on) max 8.1mΩ@VGS = 10V 10.3mΩ@VGS = 4.5V Qg(typ.) 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.