IRF6622 Datasheet | International Rectifier

.. PD - 97199 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs pliant Containing No Lead and Bromide  Low Profile (<0.6 mm) Dual Sided Cooling patible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket  Low Conduction and Switching Losses patible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V Qrr 7.1nC Vgs(th) 1.8V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET™ ISOMETRIC Description The IRF6622 bines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest bined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate...