Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
Features
- anche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.7A 5.3A BOTTOM 12A TOP
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www. irf. com
5
IRF6622
Current Regulator Same Type as D. U. T. Id Vds
50KΩ 12V .2µF .3µF
Vgs
D. U. T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(.
IRF6622_InternationalRectifier.pdf
