s + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 7. Normalized On-Resistance vs. Temperature 50 T J = 25°C 40 Ty.

uctive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD VDS 90% + VDD D.U.T VGS Pulse Width < 1µs Duty Factor <.

The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.

IRF6620

IRF6620PBF

IRF6620TRPBF

IRF6621

IRF6621PbF

IRF6621TRPbF

IRF6622PBF

IRF6622TRPBF

IRF6623

IRF6623PBF

IRF6623TRPBF

IRF6626

IRF6626PbF