IRF6622
Overview
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
