IRF6622PBF Datasheet | International Rectifier

Description The IRF6622Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6622Pb F balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6622Pb F has been optimized for parameters that are critical in synchronous buck converter’s Control FET sockets. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Typical RDS(on) (mΩ) Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f Ãg h VGS, Gate-to-Source Voltage (V) 25 ±20 15 12 59 120 13 12 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 VDS= 20V VDS= 13V A m J A ID= 12A 15 10 5 T J = 25°C 0 3 4 5 6 7 8 ID = 15A VDS= 5.0V T J = 125°C VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (n C) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on...