IRF6622 Datasheet | International Rectifier

Description The IRF6622 bines the latest HEXFET Power MOSFET Silicon Technology with the advanced Direct FET packaging to achieve the lowest bined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Typical RDS(on) (mΩ) Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f Ãg h VGS, Gate-to-Source Voltage (V) 25 ±20 15 12 59 120 13 12 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 VDS= 20V VDS= 13V A m J A ID= 12A 15 10 5 T J = 25°C 0 3 4 5 6 7 ID = 15A VDS= 5.0V T J = 125°C VGS, Gate -to -Source Voltage (V) Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on 1 in. square Cu board, steady state. Fig 1. Typical On-Resistance Vs. Gate Voltage QG Total Gate Charge (n C) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage - TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.18m H, RG = 25Ω, IAS = 12A. .irf. 04/04/06 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1...