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IRF6622 - DirectFET Power MOSFET

General Description

The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.

Key Features

  • anche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www. irf. com 5 IRF6622 Current Regulator Same Type as D. U. T. Id Vds 50KΩ 12V .2µF .3µF Vgs D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V(.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6622PBF DirectFET Power MOSFET
IRF6622TRPBF DirectFET Power MOSFET
IRF6620 HEXFETPower MOSFET
IRF6620PBF Power MOSFET
IRF6620TRPBF Power MOSFET
IRF6621 Power MOSFET
IRF6621PbF Power MOSFET
IRF6621TRPbF Power MOSFET
IRF6623 HEXFET Power MOSFET
IRF6623PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 97199 IRF6622 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket  Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V Qrr 7.1nC Vgs(th) 1.8V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.