Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.
Features
- 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
ID = 50µA
ID = 100µA ID = 250µA ID = 1mA ID = 1.0A
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.7A 5.3A BOTTOM 12A TOP
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maxim.
IRF6622PBF_InternationalRectifier.pdf
