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IRF6622PBF - DirectFET Power MOSFET

General Description

The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.

Key Features

  • 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID = 50µA ID = 100µA ID = 250µA ID = 1mA ID = 1.0A Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maxim.

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Full PDF Text Transcription for IRF6622PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6622PBF. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) PD - 97244 l l l l l l l l l RoHs Compliant  Lead-Free ...

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se specified) PD - 97244 l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V Qrr 7.1nC Vgs(th) 1.8V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.

More Datasheets from International Rectifier (now Infineon)

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