IRF6637PBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6637PBF
Manufacturer	International Rectifier
File Size	287.79 KB
Description	Power MOSFET
Datasheet	IRF6637PBF Datasheet
Additional preview pages of the IRF6637PBF datasheet.

Product details

Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 160 Fig.

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Published: Apr 1, 2014 |