Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ltage (V)
1
10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00
0.1 VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate Threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
60 50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
160
Fig.
IRF6637TRPBF Datasheet
