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IRF6641TR1PBF Datasheet - International Rectifier

N-Channel HEXFET Power MOSFET

IRF6641TR1PBF Features

* = 150°C Single Pulse 1 10 100 1msec 1000 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 VDS, Drain-to-Source Voltage (V) 5 4 ID, Drain Current (A) 5.0 3 4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 2

IRF6641TR1PBF General Description

The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6641TR1PBF Datasheet (282.73 KB)

Preview of IRF6641TR1PBF PDF

Datasheet Details

Part number:

IRF6641TR1PBF

Manufacturer:

International Rectifier

File Size:

282.73 KB

Description:

N-channel hexfet power mosfet.
www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qua.

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IRF6641TR1PBF N-Channel HEXFET Power MOSFET International Rectifier

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