IRF6641TR1PBF mosfet equivalent, n-channel hexfet power mosfet.
M
ID, Drain-to-Source Current (A)
7.0V
BOTTOM
10
10
7.0V 1
≤60µs PULSE WIDTH
Tj = 25°C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10
0.1 0.1
≤60µs PULSE WIDTH
Tj = .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET pack.
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