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IRF6645 - DirectFET Power MOSFET Typical calues

Datasheet Summary

Description

The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.

Features

  • 1000.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Fig11. Maximum Safe Operating Area 6.0 5.0 VGS(th) Gate threshold Voltage (V) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 ID , Drain Current (A) 4.0 3.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA 2.0 1.0 0.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 120 Fig 13. Typic.

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Datasheet Details

Part number IRF6645
Manufacturer International Rectifier
File Size 268.82 KB
Description DirectFET Power MOSFET Typical calues
Datasheet download datasheet IRF6645 Datasheet
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www.DataSheet4U.com PD - 97006 IRF6645 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.8nC RDS(on) 28mΩ@ 10V 100V max ±20V max Vgs(th) 4.0V 14nC SJ Applicable DirectFET Outline and Substrate Outline (see p.
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