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IRF6645TRPBF - Power MOSFET

This page provides the datasheet information for the IRF6645TRPBF, a member of the IRF6645PBF Power MOSFET family.

Datasheet Summary

Description

The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.

Features

  • IRF6645/TRPbF 1000 100.

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IRF6645PbF IRF6645TRPbF l RoHS Compliant, Halogen-Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 100V max ±20V max 28mΩ@ 10V Qg tot Qgd Vgs(th) 14nC 4.8nC 4.0V Applicable DirectFET Outline and Substrate Outline (see p.
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