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IRF6646 Datasheet Directfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 96995A IRF6646 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 12nC RDS(on) 7.6mΩ@ 10V 80V max ±20V max 36nC Vgs(th) 3.8V MN Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • rain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 12 ID, Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 5.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 4.0 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 900 800 700 600 500 400 300 200 100 0 25 50 75 3.

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