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IRF6646PbF - DirectFET Power MOSFET

Datasheet Summary

Description

The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • msec 10msec 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 14 6.0 ID = 150µA 12 ID = 250µA 5.0 ID = 1.0mA 10 ID = 1.0A 8 4.0 6 4 3.0 2 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) Fig 12. Maximum Drain Current vs. Ambient Temperature 1000 900 800 700 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fi.

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PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS 80V max Typical values (unless otherwise specified) VGS RDS(on) ±20V max 7.6mΩ@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 36nC 12nC 2.0nC 48nC 18nC 3.8V MN DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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