IRF6646PbF Datasheet Directfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97224A IRF6646PbF IRF6646TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET VDSS 80V max Typical values (unless otherwise specified) VGS RDS(on) ±20V max 7.6mΩ@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 36nC 12nC 2.0nC 48nC 18nC 3.8V MN DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

Datasheet Details

Part number	IRF6646PbF
Manufacturer	International Rectifier (now Infineon)
File Size	646.54 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6646PbF-InternationalRectifier.pdf

General Description

The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Key Features

msec 10msec 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 14 6.0 ID = 150µA 12 ID = 250µA 5.0 ID = 1.0mA 10 ID = 1.0A 8 4.0 6 4 3.0 2 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) Fig 12. Maximum Drain Current vs. Ambient Temperature 1000 900 800 700 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fi.

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