IRF6646TRPbF Description
The IRF6646PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...
IRF6646TRPbF Key Features
- RoHs pliant
- Lead-Free (Qualified up to 260°C Reflow)
- Application Specific MOSFETs
- Ideal for High Performance Isolated Converter Primary Switch Socket
- Optimized for Synchronous Rectification
- Low Conduction Losses
- High Cdv/dt Immunity
- Low Profile (<0.7mm)