IRF6655 Description
The IRF6655 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest bined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection...
IRF6655 Key Features
- IRF6655 RDS(on) 53mΩ@ 10V RoHS pliant containing no lead or bromide
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Ideal for High Performance Isolated Converter Primary Switch Socket
- Ideal for Control FET sockets in 36V – 75V in Synchronous Buck applications
- Low Conduction Losses