Datasheet Details
| Part number | IRF6655 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 283.99 KB |
| Description | DirectFET Power MOSFET Typical values |
| Datasheet |
 IRF6655 Datasheet
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General Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.
Key Features
- sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 5 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 5.5 5 4.5 4 3.5 ID = 25µA 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °.