Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.
Features
- sec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100msec
10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
1
1msec 10msec
0.1
0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
5.5 5 4.5 4 3.5 ID = 25µA 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °.
IRF6655_InternationalRectifier.pdf
