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IRF6655 DirectFET Power MOSFET Typical values

IRF6655 Description

PD - 96926D www.DataSheet4U.com DirectFET™ Power MOSFET ‚ l IRF6655 RDS(on) 53mΩ@ 10V RoHS compliant containing no lead or bromide  l Low Profile .
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-stat.

IRF6655 Features

* sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Dr

IRF6655 Applications

* l Low Conduction Losses l Compatible with existing Surface Mount Techniques  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC 100V max ±20V max 8.7nC Vgs(th) 3.9V SH MN Direc

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Datasheet Details

Part number
IRF6655
Manufacturer
International Rectifier
File Size
283.99 KB
Datasheet
IRF6655_InternationalRectifier.pdf
Description
DirectFET Power MOSFET Typical values

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DirectFET Power MOSFET Typical values International Rectifier
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