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International Rectifier Electronic Components Datasheet

IRF6655 Datasheet

DirectFET Power MOSFET Typical values

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l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
PD - 96926D
IRF6655www.DataSheet4U.com
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 53m@ 10V
Qg tot
Qgd
Vgs(th)
8.7nC
2.8nC
3.9V
SH DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SH MQ MX MT MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
100 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
±20
4.2
3.4 A
19
34
11 mJ
5.0 A
200
180 ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0 VDS= 20V
6.0
4.0
2.0
0.0
0
2468
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance Vs. Gate Voltage
10
„ Starting TJ = 25°C, L = 0.89mH, RG = 25, IAS = 5.0A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
1
11/16/05


International Rectifier Electronic Components Datasheet

IRF6655 Datasheet

DirectFET Power MOSFET Typical values

No Preview Available !

IRF6655
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
100
–––
–––
2.8
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
6.6
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
(Body Diode) e
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
–––
Typ.
–––
0.12
53
–––
-11
–––
–––
–––
–––
–––
8.7
2.1
0.58
2.8
3.2
3.4
4.5
1.9
7.4
2.8
14
4.3
530
110
29
510
67
Typ.
–––
–––
–––
31
37
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
62 mVGS = 10V, ID = 5.0A g
4.8 V VDS = VGS, ID = 25µA
––– mV/°C
20
250
100
-100
–––
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 5.0A
11.7
––– VDS = 50V
––– nC VGS = 10V
4.2 ID = 5.0A
––– See Fig. 17
–––
––– nC VDS = 16V, VGS = 0V
2.9
––– VDD = 50V, VGS = 10V g
––– ID = 5.0A
––– ns RG=6.0
–––
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
––– VGS = 0V, VDS = 1.0V, f=1.0MHz
––– VGS = 0V, VDS = 80V, f=1.0MHz
Max. Units
Conditions
38 MOSFET symbol
D
A showing the
34 integral reverse
G
p-n junction diode.
S
1.3 V TJ = 25°C, IS = 5.0A, VGS = 0V g
47 ns TJ = 25°C, IF = 5.0A, VDD = 25V
56 nC di/dt = 100A/µs g
Notes:
… Pulse width 400µs; duty cycle 2%.
2
www.irf.com


Part Number IRF6655
Description DirectFET Power MOSFET Typical values
Maker International Rectifier
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IRF6655 Datasheet PDF






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