IRF6662 Datasheet - International Rectifier

DirectFet Power MOSFET

IRF6662 Features

* rea 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 160 EAS , Single Pu

IRF6662 General Description

The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6662 Datasheet (294.52 KB)

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IRF6662

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International Rectifier

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294.52 KB

Description:

Directfet power mosfet.
www.DataSheet4U.com PD - 97039 IRF6662 DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free Low Profile (<0.7 .

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IRF6662 DirectFet Power MOSFET International Rectifier

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IRF6662 Features

IRF6662 General Description

Datasheet Details

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