IRF6662TRPBF Datasheet - International Rectifier

Power MOSFET

IRF6662TRPBF Features

* e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100

IRF6662TRPBF General Description

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6662TRPBF Datasheet (271.77 KB)

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Part number:

IRF6662TRPBF

Manufacturer:

International Rectifier

File Size:

271.77 KB

Description:

Power mosfet.
PD - 97243A DirectFET™ Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance I.

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IRF6662TRPBF Power MOSFET International Rectifier

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IRF6662TRPBF Features

IRF6662TRPBF General Description

Datasheet Details

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